A MODEL OF SI DIFFUSION IN GAAS BASED ON THE EFFECT OF THE FERMI LEVEL

被引：64

作者：

YU, S ^{[1
]}

GOSELE, UM ^{[1
]}

TAN, TY ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2952 / 2961

页数：10

共 19 条

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