SENSITIVITY OF SI DIFFUSION IN GAAS TO COLUMN-IV AND COLUMN-VI DONOR SPECIES

被引：50

作者：

DEPPE, DG ^{[1
]}

HOLONYAK, N ^{[1
]}

BAKER, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.99072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：129 / 131

页数：3

共 15 条

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE
ANTELL, GR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &
[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS
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SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330
[3] LAYER INTERDIFFUSION IN SE-DOPED ALXGA1-XAS-GAAS SUPERLATTICES
DEPPE, DG
HOLONYAK, N
HSIEH, KC
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STUTIUS, W
WILLIAMS, J
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 581 - 583
[4] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS
DEPPE, DG
HSIEH, KC
HOLONYAK, N
BURNHAM, RD
THORNTON, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4515 - 4520
[5] BACKGROUND DOPING DEPENDENCE OF SILICON DIFFUSION IN P-TYPE GAAS
DEPPE, DG
HOLONYAK, N
KISH, FA
BAKER, JE
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 998 - 1000
[6] COUPLED STRIPE ALXGA1-XAS-GAAS QUANTUM-WELL LASERS DEFINED BY IMPURITY-INDUCED (SI) LAYER DISORDERING
DEPPE, DG
JACKSON, GS
HOLONYAK, N
BURNHAM, RD
THORNTON, RL
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 632 - 634
[7] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL
GREINER, ME
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752
[8] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING
HURLE, DTJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) : 627 - 637
[9] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .2. TIN-DOPING
HURLE, DTJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) : 639 - 646
[10] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE
HUTCHINSON, PW
DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01) : 65 - 73

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