LAYER INTERDIFFUSION IN SE-DOPED ALXGA1-XAS-GAAS SUPERLATTICES

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[3] CASEY HC, 1973, ATOMIC DIFFUSION SEM, P367

[4] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991

[5] BACKGROUND DOPING DEPENDENCE OF SILICON DIFFUSION IN P-TYPE GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 998 - 1000

[6] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[7] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[8] IMPURITY INDUCED LAYER DISORDERING OF SI IMPLANTED ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES - LAYER DISORDERING VIA DIFFUSION FROM EXTRINSIC DISLOCATION LOOPS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1329 - 1334

[9] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 102 - 104

[10] HOLONYAK N, 1983, Patent No. 4378255

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[3] CASEY HC, 1973, ATOMIC DIFFUSION SEM, P367

[4] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991

[5] BACKGROUND DOPING DEPENDENCE OF SILICON DIFFUSION IN P-TYPE GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 998 - 1000

[6] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[7] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[8] IMPURITY INDUCED LAYER DISORDERING OF SI IMPLANTED ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES - LAYER DISORDERING VIA DIFFUSION FROM EXTRINSIC DISLOCATION LOOPS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1329 - 1334

[9] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 102 - 104

[10] HOLONYAK N, 1983, Patent No. 4378255