LAYER INTERDIFFUSION IN SE-DOPED ALXGA1-XAS-GAAS SUPERLATTICES

被引：29

作者：

DEPPE, DG

HOLONYAK, N

HSIEH, KC

GAVRILOVIC, P

STUTIUS, W

WILLIAMS, J

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] POLAROID CORP,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.98354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：581 / 583

页数：3

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OSSART, P
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RAO, EVK
THIBIERGE, H
BRILLOUET, F
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AZOULAY, R
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 867 - 869
[23] CHEMICAL EFFECTS DUE TO THE IONIZATION OF IMPURITIES IN SEMICONDUCTORS
REISS, H
[J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (07) : 1209 - 1217
[24] SOLUBILITY OF FLAWS IN HEAVILY-DOPED SEMICONDUCTORS
SHOCKLEY, W
MOLL, JL
[J]. PHYSICAL REVIEW, 1960, 119 (05): : 1480 - 1482
[25] THE EFFECT OF ARSENIC PRESSURE ON IMPURITY DIFFUSION IN GALLIUM ARSENIDE
VIELAND, LJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) : 318 - 320