INFLUENCE OF BORON ON TIN INDUCED INTERDIFFUSION IN GAAS-GA0.72AL0.28AS SUPERLATTICES

[1] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191

[2] CARRIER DEPLETION IN SULFUR DOPED EPITAXIAL GAAS LAYER BY BORON ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L389 - L390

[3] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 849 - 850

[4] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[5] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 549 - 551

[6] DISORDERING OF GA1-XALXAS-GAAS QUANTUM WELL STRUCTURES BY DONOR SULFUR DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 867 - 869

[7] INVESTIGATION OF COMPENSATION IN IMPLANTED N-GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3898 - 3905

[1] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191

[2] CARRIER DEPLETION IN SULFUR DOPED EPITAXIAL GAAS LAYER BY BORON ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L389 - L390

[3] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 849 - 850

[4] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[5] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 549 - 551

[6] DISORDERING OF GA1-XALXAS-GAAS QUANTUM WELL STRUCTURES BY DONOR SULFUR DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 867 - 869

[7] INVESTIGATION OF COMPENSATION IN IMPLANTED N-GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3898 - 3905