CARRIER DEPLETION IN SULFUR DOPED EPITAXIAL GAAS LAYER BY BORON ION-IMPLANTATION

被引：6

作者：

ITOH, T

NOMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.L389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L389 / L390

页数：2

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