MOSSBAUER-SPECTROSCOPY INVESTIGATION OF THE DX-CENTER IN TE-IMPLANTED ALXGA1-XAS

被引：5

作者：

BEMELMANS, H ^{[1
]}

BORGHS, G ^{[1
]}

LANGOUCHE, G ^{[1
]}

机构：

[1] INTERUNIV INST MICROELECTR,B-3001 LOUVAIN,BELGIUM

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 63卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(92)95186-U

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Mossbauer measurements were performed on AlxGa1-xAs implanted with Te-129m isotopes. A defect configuration, which is characterized by a large electric field gradient, is observed in these measurements. This defect configuration shows persistent photoionisation and we can associate it with the so-called "DX-center". This persistent photoionisation and the time constant of the relaxation from the DX-center defect site, after the light is turned off, are measured by Mossbauer spectroscopy.

引用

页码：151 / 153

页数：3

共 7 条

[1] MOSSBAUER STUDY OF THE DEFECT STRUCTURES AROUND TE IMPLANTED IN ALXGA1-XAS [J].