MOSSBAUER STUDY OF THE DEFECT STRUCTURES AROUND TE IMPLANTED IN ALXGA1-XAS

被引:5
作者
BEMELMANS, H [1 ]
BORGHS, G [1 ]
LANGOUCHE, G [1 ]
机构
[1] INTERUNIV INST MICROELECTR,B-3030 LOUVAIN,BELGIUM
来源
HYPERFINE INTERACTIONS | 1990年 / 56卷 / 1-4期
关键词
D O I
10.1007/BF02405474
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
129mTe-atoms were implanted in AlxGa1-xAs-samples (with x varying from 0 to 1) with a dose of 2×1013 atoms/cm2. After rapid thermal annealing to 900°C, a variation in the Mössbauer spectra as a function of x is observed. For x between 0.2 and 0.7, a component with a large electric field gradient is dominant in the spectra, while for the other values of x a single line dominates. The presence of the component with a large electric field gradient coincides with the presence of the so-called "DX-center". © 1990 J.C. Baltzer A.G. Scientific Publishing Company.
引用
收藏
页码:1553 / 1556
页数:4
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