THE EFFECTS OF VALENCE STATES OF MANGANESE ON ELECTRICAL-PROPERTIES OF ZNO VARISTORS

被引：3

作者：

CHEN, YC ^{[1
]}

SHEN, CY ^{[1
]}

CHEN, HZ ^{[1
]}

WEI, YF ^{[1
]}

WU, L ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 08期

关键词：

DONOR CONCENTRATION; TRAP DENSITY; BARRIER HEIGHT; DEPRESSION ANGLE; RELAXATION TIME;

D O I：

10.1143/JJAP.30.1746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of ZnO varistors with various valence states of manganese were studied. The composition containing low valence state of manganese exhibits low donor concentration, trap density and barrier height. The compositions with lower trap density have the characteristics of higher nonlinear coefficient, higher voltage ratio and lower leakage current. The electrical properties were improved by increasing the sintering temperature and time. It is also found that the depression angle decreases as a function of the increasing sintering time and temperature. The relaxation time for tau-3 decreases with increasing sintering time. It indicates an enhancement in the degree of uniformity in trapping conductance and the trap emission/capture rate when sintering time increases. The dependence of the depression angle and relaxation time on the composition have been also presented. On the other hand, the dependence between the electrical properties and wetting behavior of intergranular phase is investigated.

引用

页码：1746 / 1752

页数：7

共 32 条

[1] COMPLEX-PLANE ANALYSIS OF TRAPPING PHENOMENA IN ZINC-OXIDE BASED VARISTOR GRAIN-BOUNDARIES [J].