PROPERTIES, PREPARATION, AND DEVICE APPLICATIONS OF INDIUM-PHOSPHIDE

[1] ALFEROV ZI, 1979, IZV AN SSSR FIZ+, V43, P1448

[2] PHONON FREQUENCIES FROM RAMAN SPECTRUM OF INDIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (20): : L275 - +

[3] ALLEN RE, UNPUBLISHED

[4] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577

[5] ANTYPAS GA, 1977, I PHYS C SER B, V33, P55

[6] APSLEY N, 1980, INT S GAAS RELATED C

[7] APSLEY N, COMMUNICATION

[8] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 333 - 335

[9] FINE-STRUCTURE IN OPTICAL-TRANSITIONS FROM 3D AND 4D CORE LEVELS TO THE LOWER CONDUCTION-BAND IN GA-V AND IN-V COMPOUNDS [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (02) : 99 - 104

[10] BACHMANN K, UNPUBLISHED

[1] ALFEROV ZI, 1979, IZV AN SSSR FIZ+, V43, P1448

[2] PHONON FREQUENCIES FROM RAMAN SPECTRUM OF INDIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (20): : L275 - +

[3] ALLEN RE, UNPUBLISHED

[4] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577

[5] ANTYPAS GA, 1977, I PHYS C SER B, V33, P55

[6] APSLEY N, 1980, INT S GAAS RELATED C

[7] APSLEY N, COMMUNICATION

[8] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 333 - 335

[9] FINE-STRUCTURE IN OPTICAL-TRANSITIONS FROM 3D AND 4D CORE LEVELS TO THE LOWER CONDUCTION-BAND IN GA-V AND IN-V COMPOUNDS [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (02) : 99 - 104

[10] BACHMANN K, UNPUBLISHED