PROPERTIES, PREPARATION, AND DEVICE APPLICATIONS OF INDIUM-PHOSPHIDE

[11] Bachmann K. J., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1343

[12] GROWTH OF INP CRYSTALS FROM MELT [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) : 279 - 302

[13] CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 137 - 150

[14] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 446 - 448

[15] ION PROBE ANALYSIS OF INDIUM-TIN OXIDE INDIUM-PHOSPHIDE JUNCTIONS [J]. SOLAR ENERGY MATERIALS, 1979, 1 (3-4): : 249 - 255

[16] PHASE-EQUILIBRIA AND VAPOR-PRESSURES OF PURE PHOSPHORUS AND OF INDIUM-PHOSPHORUS SYSTEM AND THEIR IMPLICATIONS REGARDING CRYSTAL-GROWTH OF INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 835 - 846

[17] SOLAR-CELL CHARACTERISTICS AND INTERFACIAL CHEMISTRY OF INDIUM-TIN-OXIDE-INDIUM PHOSPHIDE AND INDIUM-TIN-OXIDE-GALLIUM ARSENIDE JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3441 - 3446

[18] MELT AND SOLUTION GROWTH OF BULK SINGLE-CRYSTALS OF QUATERNARY-III-V ALLOYS [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (03): : 171 - 206

[19] BACHMANN KJ, 1979, CURR TOP MATER SCI, V3, P477

[20] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030

[11] Bachmann K. J., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1343

[12] GROWTH OF INP CRYSTALS FROM MELT [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) : 279 - 302

[13] CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 137 - 150

[14] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 446 - 448

[15] ION PROBE ANALYSIS OF INDIUM-TIN OXIDE INDIUM-PHOSPHIDE JUNCTIONS [J]. SOLAR ENERGY MATERIALS, 1979, 1 (3-4): : 249 - 255

[16] PHASE-EQUILIBRIA AND VAPOR-PRESSURES OF PURE PHOSPHORUS AND OF INDIUM-PHOSPHORUS SYSTEM AND THEIR IMPLICATIONS REGARDING CRYSTAL-GROWTH OF INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 835 - 846

[17] SOLAR-CELL CHARACTERISTICS AND INTERFACIAL CHEMISTRY OF INDIUM-TIN-OXIDE-INDIUM PHOSPHIDE AND INDIUM-TIN-OXIDE-GALLIUM ARSENIDE JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3441 - 3446

[18] MELT AND SOLUTION GROWTH OF BULK SINGLE-CRYSTALS OF QUATERNARY-III-V ALLOYS [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (03): : 171 - 206

[19] BACHMANN KJ, 1979, CURR TOP MATER SCI, V3, P477

[20] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030