ELECTRICAL CHARACTERISTICS OF BARIUM-TITANATE FILMS PREPARED BY LASER-ABLATION

The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are epsilon = 200 and 1 MV/cm, respectively. The switching characteristics are Q(c)=0.66 muc/cm2, t(s)=0.1 ps, and J1=1.57 muA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is Superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.