THERMAL-CONDUCTIVITY AND DIFFUSIVITY OF A THIN-FILM SIO2-SI3N4 SANDWICH SYSTEM

被引：85

作者：

VOLKLEIN, F

机构：

[1] Akademie der Wissenschaften der D.D.R., Physikalisch-Technisches Institut, DDR-6900 Jena

来源：

THIN SOLID FILMS | 1990年 / 188卷 / 01期

关键词：

D O I：

10.1016/0040-6090(90)90190-O

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal conductivity, diffusivity and emissivity of a sandwich-system of low pressure chemically vapour-deposited SiO2 and Si3N4 films (200 nm of Si3N4 followed by 400 nm of SiO2 and 200 nm of Si3N4) are investigated in the temperature range 80-400 K. The steady state and dynamical measuring principles are described and the results are represented and discussed. © 1990.

引用

页码：27 / 33

页数：7

共 12 条

[1]

AMUNDSEN T, 1968, PHILOS MAG, V11, P561

[2]

BOJKO BT, 1973, THIN SOLID FILMS, V17, P157

[3]

Decker D.L., 1986, NBS SPEC PUBL, V727, P291

[4] THERMAL-CONDUCTIVITY OF THIN-FILMS OF ALKALI-METALS [J].