SUBHALF-MICROMETER P-CHANNEL MOSFETS WITH 3.5-NM GATE OXIDE FABRICATED USING X-RAY-LITHOGRAPHY

被引：11

作者：

MIYAKE, M

KOBAYASHI, T

DEGUCHI, K

KIMIZUKA, M

HORIGUCHI, S

KIUCHI, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 06期

关键词：

D O I：

10.1109/EDL.1987.26625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：266 / 268

页数：3

共 15 条

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CHAM, KM ;

WENOCUR, DW ;

LIN, J ;

LAU, CK ;

FU, HS .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :49-52

[2] SUB-100-NM CHANNEL-LENGTH TRANSISTORS FABRICATED USING X-RAY-LITHOGRAPHY [J].

CHOU, SY ;

SMITH, HI ;

ANTONIADIS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :253-255

[3]

DEGUCHI K, 1985, S VLSI, P74

[4] 0.15 MU-M CHANNEL-LENGTH MOSFETS FABRICATED USING E-BEAM LITHOGRAPHY [J].

FICHTNER, W ;

WATTS, RK ;

FRASER, DB ;

JOHNSTON, RL ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :412-414

[5] EXPERIMENTAL RESULTS ON SUBMICRON-SIZE P-CHANNEL MOSFETS [J].

FICHTNER, W ;

LEVIN, RM ;

TAYLOR, GW .

ELECTRON DEVICE LETTERS, 1982, 3 (02) :34-37

[6]

Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761

[7]

Howard R. E., 1982, IEEE Electron Device Letters, VEDL-3, P322, DOI 10.1109/EDL.1982.25585

[8]

Kobayashi T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P414

[9]

KWASNICK RF, 1986, S VLSI TECHNOLOGY, P11

[10]

ONO T, 1985, S VLSI, P84

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