HOT-ELECTRON-INDUCED MINORITY-CARRIER GENERATION IN BIPOLAR JUNCTION TRANSISTORS

被引：10

作者：

ISHIUCHI, H ^{[1
]}

TAMBA, N ^{[1
]}

SHOTT, JD ^{[1
]}

KNORR, CJ ^{[1
]}

WONG, SS ^{[1
]}

机构：

[1] STANFORD UNIV, INTEGRATED CIRCUITS LABS, STANFORD, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the observation and analysis of minority-carrier generation in the collector and the substrate of n-p-n bipolar junction transistors as a result of photons which are generated in the collector-base depletion region. Both the substrate current and the additional leakage current peak at VBE ~ 0.8 V. In our model of the phenomena, the photons induce the generation of carriers both in the depletion region and in the neutral region. The generated minority carriers in the neutral region diffuse and contribute to the substrate current and the junction leakage current. The contribution of the carriers which are generated in the depletion region is not dominant. © 1990 IEEE

引用

页码：490 / 492

页数：3

共 16 条

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