ONE-DIMENSIONAL ELECTRON TUNNELING IN SEMICONDUCTOR INCLUDING INELASTIC SCATTERING

被引：4

作者：

Cai, W. ^{[1
]}

Zheng, T. F. ^{[1
]}

Hu, P. ^{[1
]}

Lax, M. ^{[2
,3
,4
]}

机构：

[1] CUNY City Coll, Dept Phys, New York, NY 10031 USA

[2] CUNY, Grad Ctr, New York, NY 10031 USA

[3] CUNY, Dept Phys, New York, NY 10031 USA

[4] AT&T Bell Labs, Murray Hill, NJ 07974 USA

来源：

MODERN PHYSICS LETTERS B | 1991年 / 5卷 / 03期

关键词：

D O I：

10.1142/S0217984991000216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose two approaches to study the electron tunneling including inelastic scattering. Our calculation shows some interesting inelastic-scattering-assisted resonances in tunneling.

引用

页码：173 / 180

页数：8

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