CHARACTERIZATION OF EPITAXIAL GE FILMS GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION ON GE(111) AND GAAS(111) SUBSTRATES

被引：4

作者：

POSTHILL, JB ^{[1
]}

RUDDER, RA ^{[1
]}

HATTANGADY, SV ^{[1
]}

FOUNTAIN, GG ^{[1
]}

VITKAVAGE, DJ ^{[1
]}

MARKUNAS, RJ ^{[1
]}

PARIKH, NR ^{[1
]}

YU, N ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576241

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1130 / 1135

页数：6

共 11 条

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