OPTICAL AND ELECTRON EMISSIONS OF INTENSELY ILLUMINATED SOLIDS

被引：2

作者：

HAUCHECORNE, G

BOISSEL, P

KERHERVE, F

MAYER, G

机构：

来源：

OPTICS COMMUNICATIONS | 1979年 / 30卷 / 03期

关键词：

D O I：

10.1016/0030-4018(79)90387-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：429 / 436

页数：8

共 21 条

[1]

Anisimov S. I., 1977, Soviet Physics - Uspekhi, V20, P467, DOI 10.1070/PU1977v020n06ABEH005404

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[3]

Basiev TT, 2006, QUANTUM ELECTRON+, V36, P609, DOI 10.1070/QE2006v036n06ABEH013171

[4]

BOUTRY GA, 1936, PHENOMENES PHOTOELEC, pCH7

[5] METAL PHOTOCATHODES AS SECONDARY STANDARDS FOR ABSOLUTE INTENSITY MEASUREMENTS IN VACUUM ULTRAVIOLET [J].

CAIRNS, RB ;

SAMSON, JAR .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1966, 56 (11) :1568-&

[6]

DUBRIDGE LA, 1935, NEW THEORIES PHOTO E

[7]

FOWLER RH, 1936, STATISTICAL MECHANIC

[8] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].

LAX, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924

[10] TRANSIENT OPTICAL REFLECTIVITY STUDY OF LASER ANNEALING OF ION-IMPLANTED SILICON - THRESHOLDS AND KINETICS [J].

LIU, YS ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1979, 34 (06) :363-365

← 1 2 3 →