SURFACE-SELECTIVE X-RAY TOPOGRAPHIC OBSERVATIONS OF MECHANOCHEMICAL POLISHED SILICON SURFACES USING SYNCHROTRON RADIATION

被引：25

作者：

KIMURA, S

MIZUKI, J

MATSUI, J

ISHIKAWA, T

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN

[2] NEC CORP LTD,RES & DEV,TSUKUBA,IBARAKI 305,JAPAN

[3] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期

关键词：

D O I：

10.1063/1.106922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface-selective topographic observations have been performed by extremely asymmetric diffraction, in which the glancing angle of the incident x rays is near the critical angle of total reflection. This was achieved by using the wavelength tunability of synchrotron radiation. Mechanochemical polished surfaces of Si(001) and Si(111) wafers were investigated. Strain images arising from the polished surfaces were obtained by selecting the penetration depth to be several tens of nanometers.

引用

页码：2604 / 2606

页数：3

共 11 条

[1] DIFFRACTION SCATTERING AT ANGLES FAR FROM THE BRAGG ANGLE AND THE STRUCTURE OF THIN SUBSURFACE LAYERS [J].