PROGRESS IN THE DESIGN OF CBE SYSTEMS

被引：9

作者：

MIFSUD, VJ

SULLIVAN, PW

WILLIAMS, D

机构：

[1] VG Semicon Ltd., East Grinstead

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90377-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A gas flow control system for use beam epitaxial growth systems is described. This system is used upon pressure control and employs a unique dual-value control technology. Flux control and stability of better than 0.1% and switching speeds of the order of 1 s are demonstrated. An integrated system based on this type of control system is introduced. © 1990.

引用

页码：289 / 298

页数：10

共 16 条

[1] GROWTH OF HIGH-QUALITY INDIUM-PHOSPHIDE FROM METALORGANIC SOURCES BY MOLECULAR-BEAM EPITAXY [J].