共 8 条
[1]
FUKUNAGA T, 1983, JPN J APPL PHYS, V22, P1489
[4]
HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (02)
:126-130
[5]
MODULATION-DOPED IN0.5AL0.5P/GAAS FIELD-EFFECT TRANSISTORS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1988, 27 (05)
:L922-L923
[6]
GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:657-665