GROWTH OF (ALIN)P/GAAS SINGLE QUANTUM WELL STRUCTURE ON (001) GAAS BY GAS SOURCE MBE USING ASH3 AND PH3 GAS

被引:4
作者
NAGAO, S
INOUE, Y
KATOH, M
SHIMOYAMA, K
GOTOH, H
机构
关键词
D O I
10.1016/0022-0248(89)90373-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:163 / 166
页数:4
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共 8 条
[1]  
FUKUNAGA T, 1983, JPN J APPL PHYS, V22, P1489
[2]   ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF A GAINP/ALGAINP MULTIQUANTUM WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
IKEDA, M ;
TODA, A ;
NAKANO, K ;
MORI, Y ;
WATANABE, N .
APPLIED PHYSICS LETTERS, 1987, 50 (16) :1033-1034
[3]   PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KAWAI, H ;
KANEKO, K ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :463-467
[4]   HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J].
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :126-130
[5]   MODULATION-DOPED IN0.5AL0.5P/GAAS FIELD-EFFECT TRANSISTORS [J].
OHBA, Y ;
WATANABE, MO ;
KAWASAKI, H ;
KAMEI, K ;
NAKANISI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05) :L922-L923
[6]   GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].
PANISH, MB ;
TEMKIN, H ;
SUMSKI, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :657-665
[7]   INTERFACE PROPERTIES FOR GAAS/INGAALP HETEROJUNCTIONS BY THE CAPACITANCE-VOLTAGE PROFILING TECHNIQUE [J].
WATANABE, MO ;
OHBA, Y .
APPLIED PHYSICS LETTERS, 1987, 50 (14) :906-908
[8]   LUMINESCENCE LINE-SHAPE BROADENING MECHANISMS IN GALNAS/ALLNAS QUANTUM WELLS [J].
WELCH, DF ;
WICKS, GW ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :991-993