MODULATION-DOPED IN0.5AL0.5P/GAAS FIELD-EFFECT TRANSISTORS

被引：11

作者：

OHBA, Y ^{[1
]}

WATANABE, MO ^{[1
]}

KAWASAKI, H ^{[1
]}

KAMEI, K ^{[1
]}

NAKANISI, T ^{[1
]}

机构：

[1] TOSHIBA CORP,CTR RES & DEV,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 05期

关键词：

D O I：

10.1143/JJAP.27.L922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L922 / L923

页数：2

共 8 条

[1]

KAMEI K, 1986, 12TH P INT S GAAS RE, P541

[2] 2-DIMENSIONAL-ELECTRON GAS IN UNDOPED AND SELECTIVELY-DOPED GAINP/GAAS HETEROSTRUCTURES GROWN BY CHLORIDE-VAPOR-PHASE EPITAXY [J].

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[4] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J].

OHBA, Y ;

ISHIKAWA, M ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :374-379

[5] SELECTIVELY DOPED N-GAINP/GAAS HETEROSTRUCTURES GROWN BY MOCVD [J].

TONE, K ;

NAKAYAMA, T ;

IECHI, H ;

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KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (06) :L429-L431

[6] SE-RELATED DEEP LEVELS IN INGAAIP [J].

WATANABE, MO ;

OHBA, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1032-1037

[7] INTERFACE PROPERTIES FOR GAAS/INGAALP HETEROJUNCTIONS BY THE CAPACITANCE-VOLTAGE PROFILING TECHNIQUE [J].

WATANABE, MO ;

OHBA, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :906-908

[8] BAND DISCONTINUITY FOR GAAS ALGAAS HETEROJUNCTION DETERMINED BY C-V PROFILING TECHNIQUE [J].

WATANABE, MO ;

YOSHIDA, J ;

MASHITA, M ;

NAKANISI, T ;

HOJO, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5340-5344

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