SUPPRESSION OF ABNORMAL ZN DIFFUSION IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES

被引:15
作者
KOBAYASHI, T [1 ]
KURISHIMA, K [1 ]
GOSELE, U [1 ]
机构
[1] DUKE UNIV, SCH ENGN, DURHAM, NC 27706 USA
关键词
D O I
10.1063/1.108991
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is known that highly n+-doped subcollector layers in InP/InGaAs heterojunction bipolar transistor structures lead to drastically enhanced zinc diffusion in the subsequently grown base layer. We show that this abnormal zinc diffusion can be suppressed by interrupting growth before the zinc-doped layer is grown. It is speculated that this growth interruption allows excess nonequilibrium group III self-interstitials coming from the n+-doped subcollector layer to disappear before they have a chance to enhance zinc diffusion in the base layer.
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页码:284 / 285
页数:2
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