LOW-TEMPERATURE SUBSTRATE ANNEALING OF VICINAL SI(100) FOR EPITAXIAL-GROWTH OF GAAS ON SI

被引：22

作者：

OKADA, Y

SHIMOMURA, H

SUGAYA, T

KAWABE, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

HYDROGEN ON SEMICONDUCTOR SURFACES; GAAS-ON-SI HETEROEPITAXY; MOLECULAR BEAM EPITAXY (MBE); SEMICONDUCTOR SURFACE RECONSTRUCTION; RHEED; STM;

D O I：

10.1143/JJAP.30.3774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of atomic hydrogen irradiation on vicinal Si(100) surfaces have been investigated by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscope (STM) observations. Interplay of the two different Si hydride phases and dynamic changes in the surface reconstruction have been observed and studied in detail. It has also been shown that removal of oxide from Si surface and a single-domain (2 x 1) Si surface can be obtained at annealing temperatures below 750-degrees-C with atomic hydrogen irradiation, much lower than those usually required for the conventional thermal treatment methods.

引用

页码：3774 / 3776

页数：3

共 9 条

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