HIGH ELECTRONIC-OPTICAL CONVERSION EFFICIENCY IN A VERTICAL-TO-SURFACE TRANSMISSION ELECTROPHOTONIC DEVICE WITH A VERTICAL CAVITY

被引:11
作者
NUMAI, T
KURIHARA, K
OGURA, I
KOSAKA, H
SUGIMOTO, M
KASAHARA, K
机构
[1] Opto-Electronics Research Laboratories, NEC Corp.
关键词
D O I
10.1109/68.195982
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report high electronic-optical conversion efficiency of 11.4% in a vertical to surface transmission electro-photonic device with a vertical cavity. Reduction in the electrical resistance by the double mesa structure, efficient confinement of carriers in the active region by the proton implanted structure, and photon recycling by sidewall reflectors lead to this high conversion efficiency. The electronic-optical conversion efficiency over 10% is achieved for the first time in surface emitting devices.
引用
收藏
页码:136 / 139
页数:4
相关论文
共 19 条
  • [1] NEAR-INFRARED HIGH-GAIN STRAINED LAYER INGAAS HETEROJUNCTION PHOTOTRANSISTORS - RESONANT PERIODIC ABSORPTION
    BRYAN, RP
    OLBRIGHT, GR
    FU, WS
    BRENNAN, TM
    TSAO, JY
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (13) : 1600 - 1602
  • [2] DYNAMIC, POLARIZATION, AND TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE EMITTING LASERS
    CHANGHASNAIN, CJ
    HARBISON, JP
    HASNAIN, G
    VONLEHMEN, AC
    FLOREZ, LT
    STOFFEL, NG
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1402 - 1409
  • [3] MULTIPLE WAVELENGTH TUNABLE SURFACE-EMITTING LASER ARRAYS
    CHANGHASNAIN, CJ
    HARBISON, JP
    ZAH, CE
    MAEDA, MW
    FLOREZ, LT
    STOFFEL, NG
    LEE, TP
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1368 - 1376
  • [4] INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
    GEELS, RS
    CORZINE, SW
    COLDREN, LA
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1359 - 1367
  • [5] SURFACE EMITTING SEMICONDUCTOR-LASERS
    IGA, K
    KOYAMA, F
    KINOSHITA, S
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) : 1845 - 1855
  • [6] VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION
    JEWELL, JL
    HARBISON, JP
    SCHERER, A
    LEE, YH
    FLOREZ, LT
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1332 - 1346
  • [7] KASHARA K, 1988, APPL PHYS LETT, V52, P679
  • [8] RESONANT CAVITY-ENHANCED (RCE) PHOTODETECTORS
    KISHINO, K
    UNLU, MS
    CHYI, JI
    REED, J
    ARSENAULT, L
    MORKOC, H
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (08) : 2025 - 2034
  • [9] DETECTOR CHARACTERISTICS OF A VERTICAL-CAVITY SURFACE-EMITTING LASER
    KOSAKA, H
    KURIHARA, K
    SUGIMOTO, M
    KASAHARA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7A): : L1172 - L1174
  • [10] INTENSITY NOISE AND POLARIZATION STABILITY OF GAALAS-GAAS SURFACE EMITTING LASERS
    KOYAMA, F
    MORITO, K
    IGA, K
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1410 - 1416