P-TYPE MU C-SIC PREPARED BY ECR PECVD USING TETRAMETHYLSILANE GAS

被引：6

作者：

KATSUNO, M

FUTAGI, T

OHTA, Y

MIMURA, H

KITAMURA, K

机构：

[1] Electronics Research Laboratories, Nippon Steel Corporation, Nakahara-ku, Kawasaki, 211

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷

关键词：

D O I：

10.1016/0169-4332(93)90600-G

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have prepared a p-type microcrystalline silicon carbon thin film by an electron cyclotron resonance plasma-enhanced chemical vapor deposition using Si(CH3)4 + SiH4 + B2H6 + H-2 gas mixture. The p-type muc-SiC had an optical band gap of around 2.4 eV, a dark conductivity of around 10(-2) S/cm and a C/Si ratio of around 0.02, which had almost similar values as the p-type muc-SiC prepared with a CH4 + SiH4 + B2H6 + H-2 gas mixture.

引用

页码：675 / 679

页数：5

共 8 条

[1] HIGHLY CONDUCTIVE AND WIDE OPTICAL BAND-GAP N-TYPE MU-C-SIC PREPARED BY ELECTRON-CYCLOTRON RESONANCE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].