CONDUCTANCE FLUCTUATIONS IN ULTRA-SHORT-CHANNEL SI MOSFETS

被引：3

作者：

CHOU, SY

ANTONIADIS, DA

SMITH, HI

KASTNER, MA

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 61卷 / 09期

关键词：

D O I：

10.1016/0038-1098(87)90172-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：571 / 572

页数：2

共 11 条

[1]

BLONDER GE, UNPUB

[2] SUB-100-NM CHANNEL-LENGTH TRANSISTORS FABRICATED USING X-RAY-LITHOGRAPHY [J].

CHOU, SY ;

SMITH, HI ;

ANTONIADIS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :253-255

[3] X-RAY-LITHOGRAPHY FOR SUB-100-NM-CHANNEL-LENGTH TRANSISTORS USING MASKS FABRICATED WITH CONVENTIONAL PHOTOLITHOGRAPHY, ANISOTROPIC ETCHING, AND OBLIQUE SHADOWING [J].

CHOU, SY ;

SMITH, HI ;

ANTONIADIS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1587-1589

[4]

CHOU SY, 1985, IEEE 1985 IEDM TECH, V562

[5]

CHOU SY, UNPUB IEEE T ELEC DE

[6]

CHOU SY, 1985, IEEE ELEC DEV LETT, V6, P657

[7] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN METALS [J].

LEE, PA ;

STONE, AD .

PHYSICAL REVIEW LETTERS, 1985, 55 (15) :1622-1625

[8] APERIODIC MAGNETORESISTANCE OSCILLATIONS IN NARROW INVERSION-LAYERS IN SI [J].

LICINI, JC ;

BISHOP, DJ ;

KASTNER, MA ;

MELNGAILIS, J .

PHYSICAL REVIEW LETTERS, 1985, 55 (27) :2987-2990

[9] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN SILICON INVERSION-LAYER NANOSTRUCTURES [J].

SKOCPOL, WJ ;

MANKIEWICH, PM ;

HOWARD, RE ;

JACKEL, LD ;

TENNANT, DM ;

STONE, AD .

PHYSICAL REVIEW LETTERS, 1986, 56 (26) :2865-2868

[10] MAGNETORESISTANCE OF SMALL, QUASI-ONE-DIMENSIONAL, NORMAL-METAL RINGS AND LINES [J].

UMBACH, CP ;

WASHBURN, S ;

LAIBOWITZ, RB ;

WEBB, RA .

PHYSICAL REVIEW B, 1984, 30 (07) :4048-4051

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