INTERFACE ROUGHNESS LIMITED ELECTRON-MOBILITY IN HGTE-CDTE SUPERLATTICES

被引:35
作者
MEYER, JR
ARNOLD, DJ
HOFFMAN, CA
BARTOLI, FJ
机构
关键词
D O I
10.1063/1.104840
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate that interface roughness is the dominant low-temperature scattering mechanism for electrons in HgTe-CdTe superlattices with thin wells. Not only do the experimental mobilities follow the expected d(w)6 dependence, but the observed temperature dependence is accurately reproduced by theory when the treatment of interface roughness scattering is generalized for narrow-gap superlattices. The fits to data yield roughness correlation lengths in the range 60-200 angstrom.
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页码:2523 / 2525
页数:3
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