EFFECT OF VARIOUS ETCHES ON RECOMBINATION CENTERS AT GERMANIUM SURFACES

被引：10

作者：

WALLIS, G

WANG, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1959年 / 106卷 / 03期

关键词：

D O I：

10.1149/1.2427313

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：231 / 238

页数：8

共 16 条

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[7]

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[8] DISTRIBUTION AND CROSS SECTIONS OF FAST STATES ON GERMANIUM SURFACES IN DIFFERENT GASEOUS AMBIENTS [J].

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[9] VOLUME AND SURFACE RECOMBINATION RATES FOR INJECTED CARRIERS IN GERMANIUM [J].

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