DISTRIBUTION AND CROSS-SECTIONS OF FAST STATES ON GERMANIUM SURFACES

被引：39

作者：

GARRETT, CGB

BRATTAIN, WH

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1956年 / 35卷 / 05期

关键词：

D O I：

10.1002/j.1538-7305.1956.tb03817.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1041 / 1058

页数：18

共 18 条

[1] COMBINED MEASUREMENTS OF FIELD EFFECT, SURFACE PHOTO-VOLTAGE AND PHOTOCONDUCTIVITY [J].

BRATTAIN, WH ;

GARRETT, CGB .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05) :1019-1040

[2]

BRATTAIN WH, 1953, AT&T TECH J, V32, P1

[3]

BROWN WL, 1955, PHYS REV, V98, P1565

[4]

BUCK TM, J ELEC CHEM SOC

[5] EFFECT OF NICKEL AND COPPER IMPURITIES ON THE RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM [J].

BURTON, JA ;

HULL, GW ;

MORIN, FJ ;

SEVERIENS, JC .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :853-859

[6] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].

GARRETT, CGB ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1955, 99 (02) :376-387

[7]

GARRETT CGB, 1955, JUN P W COAST EL COM, P49

[8] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[9] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J].

HAYNES, JR ;

HORNBECK, JA .

PHYSICAL REVIEW, 1955, 100 (02) :606-615

[10] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J].

HORNBECK, JA ;

HAYNES, JR .

PHYSICAL REVIEW, 1955, 97 (02) :311-321

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