ELECTROFORMING AND SWITCHING IN COPPER OXIDE-FILMS

被引：26

作者：

MORGAN, DV ^{[1
]}

HOWES, MJ ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 21卷 / 01期

关键词：

D O I：

10.1002/pssa.2210210120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：191 / 195

页数：5

共 13 条

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COPE, RG ;

PENN, AW .

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STONEHAM, AM ;

MORGAN, DV .

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GIBBONS, JF ;

BEADLE, WE .

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[5] LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS [J].

HICKMOTT, TW .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2669-&

[6]

Kubaschewski O., 1962, OXIDATION METALS ALL, V2nd ed.

[7] MEMORY SWITCHING IN SIO FILMS WITH AG AND CO ELECTRODES [J].

MANHART, S .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (01) :82-86

[8] INVESTIGATION OF STOICHIOMETRY AND IMPURITY CONTENT OF THIN SILICON OXIDE-FILMS USING RUTHERFORD SCATTERING OF MEV ALPHA-PARTICLES [J].

MORGAN, DV ;

GITTINS, RP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02) :517-&

[9]

MORGAN DV, TO BE PUBLISHED

[10] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+

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