SURFACE ORIENTATION DEPENDENCE OF GROWTH-RATE OF CUBIC GAN

被引：10

作者：

NAGAHARA, M

MIYOSHI, S

YAGUCHI, H

ONABE, K

SHIRAKI, Y

ITO, R

机构：

[1] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

[2] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91050-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The metalorganic vapor phase epitaxy (MOVPE) growth of cubic GaN has been performed on the patterned GaAs(100) substrates which have (111)A or (111)B facets. It is found that the growth features are strongly dependent on the configuration of the pattern. It is deduced that these features come from the surface-orientation-dependent growth rate, which is in the order (111)B > (100) > (111)A, combined with the diffusion of Ga adatoms on the surface. Taking advantage of the growth on the patterned substrates, the diffusion length of the Ga adatoms on the GaAs(100) surface is estimated to be several microns in the typical case.

引用

页码：197 / 202

页数：6

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