ELECTRICAL MEASUREMENTS ON HOMOGENEOUS DIFFUSED P-TYPE INP

被引：25

作者：

TUCK, B ^{[1
]}

ZAHARI, MD ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG7 2RD,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 18期

关键词：

D O I：

10.1088/0022-3727/10/18/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2473 / 2479

页数：7

共 13 条

[1] LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS [J].

BACHMANN, KJ ;

BUEHLER, E ;

SHAY, JL ;

STRNAD, AR .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :389-406

[2] MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE [J].

CARDWELL, MJ ;

PEART, RF .

ELECTRONICS LETTERS, 1973, 9 (04) :88-89

[3]

GALAVANOV VV, 1969, SOV PHYS SEMICOND+, V3, P94

[4]

HAMMER R, 1969, REV SCI INSTR, V40, P292

[5] ELECTRICAL-PROPERTIES OF ZINC DIFFUSED INDIUM-PHOSPHIDE [J].

HOOPER, A ;

TUCK, B .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :513-517

[6]

HUGHES FD, 1972, ACTA ELECTRON, V15, P43

[7]

JAY PR, 1976, THESIS U NOTTINGHAM

[8]

KUNDUKHOV RM, 1967, SOV PHYS SEMICOND+, V1, P765

[9] INFLUENCE OF A THIN OXIDE LAYER BETWEEN METAL AND SEMICONDUCTOR ON SCHOTTKY DIODE BEHAVIOR [J].

NICOLLIAN, EH ;

SCHWARTZ, B ;

COLEMAN, DJ ;

RYDER, RM ;

BREWS, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05) :1047-1055

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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