INFLUENCE OF A THIN OXIDE LAYER BETWEEN METAL AND SEMICONDUCTOR ON SCHOTTKY DIODE BEHAVIOR

被引：39

作者：

NICOLLIAN, EH ^{[1
]}

SCHWARTZ, B ^{[1
]}

COLEMAN, DJ ^{[1
]}

RYDER, RM ^{[1
]}

BREWS, JR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 05期

关键词：

D O I：

10.1116/1.569058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1047 / 1055

页数：9

共 30 条

[1] GREEN INJECTION LUMINESCENCE FROM FORWARD-BIASED AU-GAP SCHOTTKY BARRIERS
CARD, HC
SMITH, BL
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5863 - &
[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[3] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 365 - 374
[4] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[5] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[6] SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS
CROWELL, CR
ROBERTS, GI
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3726 - &
[7] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES
CROWELL, CR
SHORE, HB
LABATE, EE
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3843 - &
[8] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES
DAHLKE, WE
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 865 - &
[9] TUNNEL-INJECTION ELECTROLUMINESCENCE
FISCHER, AG
MOSS, HI
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 2112 - &
[10] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

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