PREPARATION OF WSE2 SURFACES WITH HIGH PHOTOACTIVITY

被引:23
作者
MAHALU, D [1 ]
MARGULIS, L [1 ]
WOLD, A [1 ]
TENNE, R [1 ]
机构
[1] BROWN UNIV,DEPT CHEM,PROVIDENCE,RI 02912
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 04期
关键词
D O I
10.1103/PhysRevB.45.1943
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Layered dichalcogenide semiconductors (LS) are studied intensively for photovoltaic applications. It is generally accepted that the smooth van der Waals face (perpendicular-to c) is most suitable for this purpose. Recombination centers have been associated with surface steps (exposing parallel-to c facets) or near-surface dislocations. Efforts to passivate the recombination centers had, until now, only limited success. In contrast to this approach, a method of surface preparation of LS, leading to rough surfaces that exhibit high photoactivity with high reproducibility, is presented. The physical principles underlying this technique are discussed in detail.
引用
收藏
页码:1943 / 1946
页数:4
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