GROWTH OF STRAIN-BALANCED INASP/INGAP SUPERLATTICES FOR 1.06 MU-M OPTICAL MODULATORS

被引：30

作者：

CHIU, TH

CUNNINGHAM, JE

WOODWARD, TK

SIZER, T

机构：

[1] ATandT Bell Laboratories, Holmdel

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.108951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a strain-balanced growth approach, we show that the pseudomorphic InAsP/InGaP multiple quantum well structures, grown by chemical beam epitaxy, have superior material properties for 1.06 mum modulator application when compared to the strained InAsP/InP or the lattice-matched InGaAsP/InP systems. The broadening in absorption edge due to dislocations in the strained system, or composition fluctuations in the lattice-matched system as a consequence of growth temperature instability, can be greatly minimized. A strong reduction in the nonradiative recombination centers in the strain-balanced InAsP/InGaP system has been observed.

引用

页码：340 / 342

页数：3