DIFFUSION OF AS AND GE DURING GROWTH OF GAAS ON GE SUBSTRATE BY MOLECULAR-BEAM EPITAXY - ITS EFFECT ON THE DEVICE ELECTRICAL CHARACTERISTICS

被引：39

作者：

CHAND, N

KLEM, J

HENDERSON, T

MORKOC, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3601 / 3604

页数：4

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