MINIMUM GEOMETRY ETCH WINDOWS TO A POLYSILICON SURFACE

被引：3

作者：

HOSACK, HH

机构：

[1] Texas Instruments Incorporated, Dallas

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 01期

关键词：

D O I：

10.1109/T-ED.1978.19037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Windows of less than 0.lμm in width on a polysilicon surface are demonstrated. These narrow windows have been produced by the edge etch process. The usefulness of this technique for producing narrow openings in a polysilicon layer is discussed. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：67 / 69

页数：3

共 6 条

[1] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2
BASSOUS, E
YU, HN
MANISCALCO, V
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1729 - 1737
[2] SUBMICROMETER SELF-ALIGNED DUAL-GATE GAAS FET
DEAN, RH
MATARESE, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) : 358 - 360
[3] HOSACK HH, 1977, IEEE J SOLID STATE C, V12
[4] KAMIOKA H, 1974, IEDM TECHNICAL DIGES, P279
[5] SAKAI H, J ELECTROCHEM SOC, V124, P318
[6] Tsai T. N., 1976, International Electron Devices Meeting. (Technical digest), P202

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