SUBMICROMETER SELF-ALIGNED DUAL-GATE GAAS FET

[1] ASAI S, 1974, MICROWAVES JAN

[2] BAECHTOLD W, 1973, MICROWAVES OCT

[3] BROAD-BAND MICROWAVE MEASUREMENTS ON GAAS TRAVELING-WAVE TRANSISTORS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) : 805 - 809

[4] REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1148 - +

[5] NAPOLI LS, 1973, RCA REV, V34, P608

[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[7] DUAL-GATE GALLIUM-ARSENIDE MICROWAVE FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1971, 7 (22) : 661 - &

[1] ASAI S, 1974, MICROWAVES JAN

[2] BAECHTOLD W, 1973, MICROWAVES OCT

[3] BROAD-BAND MICROWAVE MEASUREMENTS ON GAAS TRAVELING-WAVE TRANSISTORS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) : 805 - 809

[4] REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1148 - +

[5] NAPOLI LS, 1973, RCA REV, V34, P608

[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[7] DUAL-GATE GALLIUM-ARSENIDE MICROWAVE FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1971, 7 (22) : 661 - &