ABSORPTION AND LUMINESCENCE TRANSITIONS INVOLVING EXCITED HOLE STATES OF EXCITONS BOUND TO LITHIUM DONORS IN SILICON

被引：7

作者：

HENRY, MO

LIGHTOWLERS, EC

机构：

[1] Wheatstone Physics Laboratory, King's College. Strand

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 12期

关键词：

D O I：

10.1088/0022-3719/12/12/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High-resolution absorption and luminescence measurements have shown that there are four states associated with the donor-bound exciton in lithium-doped silicon. It is proposed that the experimental data are consistent with an extension of the shell model to include excited hole states.

引用

页码：L485 / L489

页数：5

共 17 条

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[5] EXCITATION DENSITY DEPENDENCE OF LUMINESCENCE FROM BOUND MULTI-EXCITON COMPLEXES IN PHOSPHORUS DOPED SILICON
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[10] Lyon S. A., 1978, Solid State Communications, V28, P317, DOI 10.1016/0038-1098(78)90432-5

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