AVALANCHE-INDUCED DRAIN SOURCE BREAKDOWN IN SILICON-ON-INSULATOR N-MOSFETS

A proposed breakdown model includes the effects of floating substrate and finite silicon thickness. The calculated I-V characteristics in the breakdown region agree well with the experimental results. The results show that 1) the drain-source breakdown voltage of silicon-on-insulator (SOI) n-MOSFETs increases with increasing channel length, increasing positive substrate voltage, and decreasing silicon film thickness; and 2) SOI n-MOSFETs have higher breakdown voltage than their bulk-silicon counterparts at large gate bias, but lower breakdown voltage at small gate bias.