CAN PHOTOEMISSION MEASURE VALENCE-BAND DISCONTINUITIES

被引：33

作者：

LIST, RS

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1228 / 1233

页数：6

共 14 条

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[6] THE SI/GAAS(110) HETEROJUNCTION [J].

LIST, RS ;

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[7] THE SI/GAAS(110) HETEROJUNCTION DISCONTINUITY - AMORPHOUS VERSUS CRYSTALLINE OVERLAYERS [J].

LIST, RS ;

WOICIK, J ;

MAHOWALD, PH ;

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[8] CHEMICAL-REACTIONS AT THE SI GAAS(110) AND SI INP(110) INTERFACES - EFFECTS ON VALENCE-BAND DISCONTINUITY MEASUREMENTS [J].

LIST, RS ;

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[9] THE SI/GAAS (110) HETEROJUNCTION - STRAIN, DISORDER, AND VALENCE-BAND DISCONTINUITY [J].

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