THE EFFECT OF STRAIN ON THE BAND-STRUCTURE OF INXGA1-XAS

被引：3

作者：

HWANG, J

PIANETTA, P

KUBIAK, GD

STULEN, RH

SHIN, CK

PAO, YC

SHEN, ZX

LINDBERG, PAP

CHOW, R

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] VARIAN MBE APPLICAT LAB,SANTA CLARA,CA 94054

[3] SANDIA NATL LABS,LIVERMORE,CA 94550

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1234 / 1239

页数：6

共 12 条

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