LOCAL MN STRUCTURES IN III-V DILUTED MAGNETIC SEMICONDUCTOR (IN,MN)AS

被引：13

作者：

MUNEKATA, H ^{[1
]}

CHANG, LL ^{[1
]}

KROL, A ^{[1
]}

SOO, YL ^{[1
]}

HUANG, S ^{[1
]}

MING, ZH ^{[1
]}

KAO, YH ^{[1
]}

机构：

[1] SUNY BUFFALO,DEPT PHYS,BUFFALO,NY 14260

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90676-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We describe the local Mn structures obtained by the X-ray absorption fine structure (XAFS) measurements for MBE-grown (In,Mn)As epilayers with high Mn compositions (Mn > 0.1). Both homogeneous and inhomogeneous epilayers were investigated. For the inhomogeneous layers grown at T(s) = 280-degrees-C, the entire shell structures are similar to those of NiAs-type bulk MnAs. For the homogeneous layers grown at T(s) = 210-degrees-C, the first shell around Mn was found to consist of disordered structure of six As atoms. This shell is then surrounded by twelve In atoms from the host InAs. These results suggest that a small six-fold Mn center (r less than or similar to 4 angstrom) imbedded in the zincblende host matrix is the stabilized form of Mn in the homogeneous III-V diluted magnetic semiconductors.

引用

页码：528 / 531

页数：4

共 14 条

[1] APPLICATION OF THE RATIO METHOD OF EXAFS ANALYSIS TO DISORDERED-SYSTEMS [J].