GROWTH OF GAAS ON PREFERENTIALLY ETCHED GAAS-SURFACES BY MIGRATION-ENHANCED EPITAXY

被引：8

作者：

KAWASHIMA, M ^{[1
]}

HORIKOSHI, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, ELECT COMMUN LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 04期

关键词：

D O I：

10.1143/JJAP.27.L483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L483 / L486

页数：4

共 13 条

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[3] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
[4] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
HORIKOSHI, Y
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02): : 169 - 179
[5] LAYER-BY-LAYER SUBLIMATION OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION IN A MOLECULAR-BEAM EPITAXY SYSTEM
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 286 - 288
[6] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 768 - &
[7] SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 940 - 942
[8] RUPPRECHT H, 1966, I PHYS SOC C SER, V3, P57
[9] EMBEDDED HETEROSTRUCTURE EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION
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[J]. APPLIED PHYSICS LETTERS, 1975, 27 (07) : 405 - 407
[10] SHAW DW, 1968, I PHYS C SER, V7, P50

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