SELFCONSISTENT LMTO CALCULATION FOR SEMICONDUCTOR CLEAN SURFACES

被引：13

作者：

OSSICINI, S

BISI, O

机构：

来源：

SURFACE SCIENCE | 1989年 / 211卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(89)90816-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：572 / 577

页数：6

相关论文

共 12 条

[1] LINEAR METHODS IN BAND THEORY
ANDERSEN, OK
[J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083
[2] EXPLICIT, 1ST-PRINCIPLES TIGHT-BINDING THEORY
ANDERSEN, OK
JEPSEN, O
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (27) : 2571 - 2574
[3] ANDERSEN OS, COMMUNICATION
[4] 1ST PRINCIPLE INVESTIGATION OF THE ELECTRONIC-PROPERTIES OF SILICON-SILICIDE INTERFACES
BISI, O
OSSICINI, S
[J]. SURFACE SCIENCE, 1987, 189 : 285 - 293
[5] ELECTRONIC-STRUCTURE OF THE (111) IDEAL AND RELAXED SURFACE OF SILICON BY THE CHEMICAL PSEUDOPOTENTIAL METHOD
CASULA, F
OSSICINI, S
SELLONI, A
[J]. SOLID STATE COMMUNICATIONS, 1979, 30 (05) : 309 - 313
[6] LMTO METHOD WITH THE MOST LOCALIZED ORBITALS FOR SURFACE ELECTRONIC-STRUCTURES
FUJIWARA, T
[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1986, 16 (07): : 869 - 885
[7] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SI, GE AND DIAMOND BY THE LMTO-ASA METHOD
GLOTZEL, D
SEGALL, B
ANDERSEN, OK
[J]. SOLID STATE COMMUNICATIONS, 1980, 36 (05) : 403 - 406
[8] ELECTRON CORRELATION IN SEMICONDUCTORS AND INSULATORS - BAND-GAPS AND QUASI-PARTICLE ENERGIES
HYBERTSEN, MS
LOUIE, SG
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5390 - 5413
[9] MODIFIED MUFFIN TIN POTENTIALS FOR BAND STRUCTURE OF SEMICONDUCTORS
KELLER, J
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (05): : L85 - &
[10] ANALYSIS OF CORE-LEVEL SHIFTS IN SOME METALLIC NI COMPOUNDS
LAMBRECHT, WRL
[J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7421 - 7424