1ST PRINCIPLE INVESTIGATION OF THE ELECTRONIC-PROPERTIES OF SILICON-SILICIDE INTERFACES

被引：17

作者：

BISI, O

OSSICINI, S

机构：

来源：

关键词：

D O I：

10.1016/S0039-6028(87)80444-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：285 / 293

页数：9

共 39 条

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