CBE GROWTH OF GAINAS/INP WAFERS FOR SURFACE EMITTING LASERS

被引：1

作者：

UCHIDA, TK

UCHIDA, T

MISE, K

YOKOUCHI, N

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90608-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

页码：1055 / 1056

页数：2

共 12 条

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[8]

UCHIDA T, IN PRESS JAPAN J APP

[9]

Uchida T. K., 1989, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE72, P1084

[10]

UCHIDA TK, 1990, JAPAN J APPL PHYS, V29

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