PHOTOINTERCALATION EFFECT OF THIN WO3 FILMS

被引：20

作者：

NAGASU, M

KOSHIDA, N

机构：

[1] Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 13期

关键词：

D O I：

10.1063/1.104231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that thin amorphous films of WO3 exhibit a photoinduced reversible coloration in an electrochemical cell of the form quartz/semitransparent Au/ethanol/WO3/In2O 3-coated glass. From measurements of the optical and electrical properties of the films, the coloration is attributed to the formation of H xWO3, presumably due to a photointercalation of protons into WO3 films. This effect is potentially useful for storage, learning, and modulation of two-dimensional optical information.

引用

页码：1324 / 1325

页数：2

共 8 条

[1] ELECTRONIC TRANSPORT IN AMORPHOUS HXWO3 [J].

CRANDALL, RS ;

FAUGHNAN, BW .

PHYSICAL REVIEW LETTERS, 1977, 39 (04) :232-235

[2] OPTICAL AND PHOTOELECTRIC PROPERTIES AND COLOR CENTERS IN THIN-FILMS OF TUNGSTEN OXIDE [J].

DEB, SK .

PHILOSOPHICAL MAGAZINE, 1973, 27 (04) :801-822

[3] OPTICAL IMPLEMENTATION OF THE HOPFIELD MODEL [J].

FARHAT, NH ;

PSALTIS, D ;

PRATA, A ;

PAEK, E .

APPLIED OPTICS, 1985, 24 (10) :1469-1475

[4] MODEL FOR BLEACHING OF WO3 ELECTROCHROMIC FILMS BY AN ELECTRIC-FIELD [J].

FAUGHNAN, BW ;

CRANDALL, RS ;

LAMPERT, MA .

APPLIED PHYSICS LETTERS, 1975, 27 (05) :275-277

[5]

FUJII M, 1983, J CHEM SOC CHEM COMM, V23, P1428

[6] A SILICON MODEL OF EARLY VISUAL PROCESSING [J].

MEAD, CA ;

MAHOWALD, MA .

NEURAL NETWORKS, 1988, 1 (01) :91-97

[7] VARIABLE BARRIER HEIGHT SEMICONDUCTOR HXWO3 DIODES [J].

RAUH, RD ;

ROSE, TL ;

BENOIT, SN .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :362-364

[8] SOI SOI BULK-SI TRIPLE-LEVEL STRUCTURE FOR 3-DIMENSIONAL DEVICES [J].

SUGAHARA, K ;

NISHIMURA, T ;

KUSUNOKI, S ;

AKASAKA, Y ;

NAKATA, H .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :193-195

← 1 →