FORMATION OF TITANIUM NITRIDE TITANIUM SILICIDE BY HIGH-PRESSURE NITRIDATION IN TITANIUM SILICON

被引：3

作者：

CHEN, SC

TAMURA, H

HARA, T

INOUE, K

ENDO, N

KINOSHITA, K

NAKAMURA, S

机构：

[1] HOSEI UNIV,KOGANEI,TOKYO 184,JAPAN

[2] M SETEK CO LTD,TAITO KU,TOKYO 110,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11A期

关键词：

TIN; BARRIER METAL; ADHESION LAYER; HIGH-PRESSURE NITRIDATION;

D O I：

10.1143/JJAP.30.2673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Formation of a titanium nitride (TiN) layer by the nitridation of Ti in high-pressure (5.8 atm) ammonium (NH3) ambient is studied. A thick TiN layer is formed in high-pressure nitridation. Solid-phase silicidation reaction occurs at Ti/Si during the nitridation. When a thin Ti layer is nitrided in high-pressure NH3 for instance, a thicker TiN and thin TiSi2 multilayer structure, TiN(250 angstrom)/TiSi2(350 angstrom)/Si is formed. This structure is useful as a barrier metal for Al ohmic contact and for the adhesion layer in blanket tungsten.

引用

页码：2673 / 2678

页数：6

共 17 条

[1] FORMATION OF TISI2 AND TIN DURING NITROGEN ANNEALING OF MAGNETRON SPUTTERED TI FILMS [J].